PHOTOELECTRICAL PROPERTIES OF CDZNSE2

An investigation of photoconductivity in films of CdZnSe2 prepared by solution growth technique is reported. The measurements were carried o ut at different temperatures and excitation intensities. Photoconducti vity is found to increase exponentially in the temperature range (303- 343 K). The value of I(ph)/I(d) is found to decrease with an increase in temperature. In order to investigate the nature of decay of photocu rrent, transient photoconductivity measurements have also been carried out at various temperatures and excitation intensities. The results a re well explained by recombination of excess D-degrees states in local ized-localized recombination.