We prepared the as-deposited 80 K-phase Bi-Sr-Ca-Cu-0 (BSCCO) films us
ing the rf magnetron sputtering method with a single target. When the
substrates were set at the position parallel to the target, the as-dep
osited 80 K-phase BSCCO films with the zero-resistance temperature of
65 K were prepared at the substrate temperatures from 630 to 650-degre
es-C under the total gas pressure of 200 mTorr, where the ratio of oxy
gen to total gas pressure was from 75 to 100%. The regions of substrat
e temperature and total gas pressure for obtaining the 80 K-phase BSCC
O film were extended by setting the substrate at the position perpendi
cular to the target.