INFLUENCE OF GA CONCENTRATION ON THE ORDERING PROCESS OF GAXIN1-XP GROWN ON GAAS

We study the ordering process of GaxIn1-xP/GaAs, for lattice matched a nd non-lattice matched samples in the Ga concentration range 0.51 < x < 0.57. The valence band splitting and the band gap reduction are calc ulated for partially ordered samples as a function of the Ga concentra tion and of the long range order (LRO) parameter. Using polarized phot oluminescence, we compare the effect of growth temperature and that of Ga concentration on the LRO parameter. The degree of ordering depends strongly on growth temperature, in the range 600-degrees-C to 725-deg rees-C. On the other hand, the change in alloy composition has a minor effect.