CONVERSION OF GAAS LAYER GROWN ON GAP SUBSTRATE TO GAASP IN LPE SYSTEM

A new fabrication technique of GaAsP layers with a desired composition on a GaP substrate was developed. A GaAs layer grown on a GaP substra te by step cooling was brought into contact with Ga-As-P saturated sol ution and kept at 795-degrees-C. This annealing process resulted the c ompositional conversion of the GaAs layer to GaAsP. The composition of the conversion layer could be controlled by adjusting the composition of the Ga-As-P solution. Fairly good GaAsP layers were grown on the c onversion layer by a consecutive slow cooling after the conversion pro cess.