PHYSICS AND APPLICATIONS OF METALLIC ARSENIC CLUSTERS IN GAAS BASED LAYER STRUCTURES

Authors
MELLOCH MR OTSUKA N HARMON ES NOLTE DD WOODALL JM MCINTURFF DT
Citation
Mr. Melloch et al., PHYSICS AND APPLICATIONS OF METALLIC ARSENIC CLUSTERS IN GAAS BASED LAYER STRUCTURES, JPN J A P 1, 32, 1993, pp. 771-774
Citations number
39
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Year of publication
1993
Supplement
32-3
Pages
771 - 774
Database
ISI
SICI code
Abstract
A semimetal/semiconductor composite material is demonstrated consistin g of semimetallic clusters of As in high-quality arsenide semiconducti ng matrices. These composites exhibit several interesting properties i ncluding high-resistivity, appreciable optical absorption below the ba ndgap of the semiconducting matrix material, a large electro-optic eff ect, and very short carrier lifetimes.