EFFECT OF CHARGE ON BOND STRENGTH IN HYDROGENATED AMORPHOUS-SILICON

Citation
Bw. Clare et al., EFFECT OF CHARGE ON BOND STRENGTH IN HYDROGENATED AMORPHOUS-SILICON, Journal of computational chemistry, 15(6), 1994, pp. 644-652
Citations number
23
Categorie Soggetti
Chemistry
ISSN journal
01928651
Volume
15
Issue
6
Year of publication
1994
Pages
644 - 652
Database
ISI
SICI code
0192-8651(1994)15:6<644:EOCOBS>2.0.ZU;2-L
Abstract
We have studied the effect of excess charge on the bond strength in th e silanes SiH4 and Si2H6 to assess whether charge trapping in a solid- state lattice might promote the technologically important photodegrada tion of amorphous silicon alloys (the Staebler-Wronski effect). The ca lculations indicate that both positive and negative charges reduce the strength of Si-H and Si-Si bonds considerably, to the point where the y may be broken easily by visible or even infrared light. (C) 1994 by John Wiley & Sons, Inc.