EXPERIMENTAL-STUDY ON COPPER-VAPOR LASER-INDUCED B-DOPING IN SI-SUBSTRATE

Authors
QIAN YJ PAN BL YAO ZX
Citation
Yj. Qian et al., EXPERIMENTAL-STUDY ON COPPER-VAPOR LASER-INDUCED B-DOPING IN SI-SUBSTRATE, Chinese Physics Letters, 12(10), 1995, pp. 605-608
Citations number
8
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
12
Issue
10
Year of publication
1995
Pages
605 - 608
Database
ISI
SICI code
0256-307X(1995)12:10<605:EOCLBI>2.0.ZU;2-C
Abstract
In this paper we report the experimental results of copper vapor laser -induced B-doping in Si-substrate, The laser doped p-n junctions have depths less than 0.2 mu m and surface B concentrations more than 10(21 ) cm(-3). The highest photoelectric efficiency of solar cell reaches 9 .2%. It shows that copper vapor laser has the distinguished advantage in laser-induced doping.