REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(001) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON DIFFRACTION

Authors
WANG LW LIN CL SHEN QW NI RS ZOU SC
Citation
Lw. Wang et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(001) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON DIFFRACTION, Chinese Physics Letters, 12(10), 1995, pp. 613-616
Citations number
11
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
12
Issue
10
Year of publication
1995
Pages
613 - 616
Database
ISI
SICI code
0256-307X(1995)12:10<613:RDEOBF>2.0.ZU;2-T
Abstract
Reactive deposition epitaxial growth of beta-FeSi2 film on Si(001) has been studied by in situ observation of reflective high energy electro n diffraction, Metastable strained phase was observed at initial stage s. Surface roughness due to the islanding was observed during the depo sition, The existed great tendency to transform the alignment of the o rientation of crystallites into random as the thickness of deposited i ron increased.