A 180-MW ND-LASC3(BO3)4 SINGLE-FREQUENCY TEM(00) MICROCHIP LASER-PUMPED BY AN INJECTION-LOCKED DIODE-LASER ARRAY

A TEM00 single-frequency, diode-pumped microchip laser of Nd(25%): LaS C3(BO3)4 is operated with an output power of 180 mW. For best performa nce the laser was pumped by the 450 mW diffraction-limited single-freq uency radiation of an injection-locked AlGaAs diode-laser array and co oled to the temperature of liquid nitrogen. The active and passive los ses of the microchip laser were investigated by measuring the relaxati on oscillation frequency and by comparing the experimental results wit h values obtained from appropriate rate equations. The power-dependent far-field pattern is in good agreement with the intensity distributio n calculated by assuming a thermally induced waveguide cavity.