EFFECT OF FLUORINE CHEMISTRY IN THE REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON FILMS FROM SI2H6-SIF4-H-2

SiF4 was added into Si2H6H2 to deposit polycrystalline silicon films a t low temperatures, around 400C in a remote plasma enhanced chemical v apor deposition reactor. It was found out that the fluorine chemistry obtained from SiF4 addition had an influence on the chemical compositi on, crystallinity, and silicon dangling bond density of the film. The fluorine chemistry reduced the amount of hydrogen and oxygen incorpora ted into the film and also suppressed the formation of powders in the gas phase, which helped the crystallization at low temperatures. Effec t of S1F(4) concentration as well as the deposition temperature was al so significant.