INFLUENCE OF A VALENT ENVIRONMENT ON THE HYPERVALENT BOND OF A SILICON ATOM .3. CRYSTAL-STRUCTURE OF 4 (O-SI)-CHELATE(LACTAMO-N-METHYL)DICHLOROSILANES AND INFLUENCE OF A VALENT ENVIRONMENT ON THE HYPERVALENT BOND OF A SILICON ATOM .3. CRYSTAL-STRUCTURE OF 4 (O-SI)-CHELATE(LACTAMO-N-METHYL)TRICHLOROSILANES

Authors
STRUCHKOV YT OVCHINNIKOV YE SHIPOV AG BAUKOV YI
Citation
Yt. Struchkov et al., INFLUENCE OF A VALENT ENVIRONMENT ON THE HYPERVALENT BOND OF A SILICON ATOM .3. CRYSTAL-STRUCTURE OF 4 (O-SI)-CHELATE(LACTAMO-N-METHYL)DICHLOROSILANES AND INFLUENCE OF A VALENT ENVIRONMENT ON THE HYPERVALENT BOND OF A SILICON ATOM .3. CRYSTAL-STRUCTURE OF 4 (O-SI)-CHELATE(LACTAMO-N-METHYL)TRICHLOROSILANES, Russian chemical bulletin, 44(9), 1995, pp. 1705-1710
Citations number
18
Categorie Soggetti
Chemistry
Journal title
Russian chemical bulletin → ACNP
ISSN journal
10665285
Volume
44
Issue
9
Year of publication
1995
Pages
1705 - 1710
Database
ISI
SICI code
1066-5285(1995)44:9<1705:IOAVEO>2.0.ZU;2-S
Abstract
X-ray structural study of two (O-Si)-chelate (lactamo-N-methyl)dichlor osilanes and two (O-Si)-chelate (lactamo-N-methyl)trichlorosilanes wit h the hypervalent O-Si-Cl bond has been carried out. Introduction of m ore electronegative substituents into equatorial positions of the trig onal-bipyramidal valent environment of a silicon atom increases the hy pervalent bond rigidity. It has been concluded that the influence of n onspecific (including electrostatic) intermolecular interactions on ge ometric parameters of the hypervalent fragment is insignificant.