IMPORTANCE OF CONTROLLING THE TL-OXIDE PARTIAL-PRESSURE THROUGHOUT THE PROCESSING OF TLBA2CACU2O7 THIN-FILMS

Citation
Mp. Siegal et al., IMPORTANCE OF CONTROLLING THE TL-OXIDE PARTIAL-PRESSURE THROUGHOUT THE PROCESSING OF TLBA2CACU2O7 THIN-FILMS, Journal of applied physics, 78(12), 1995, pp. 7186-7191
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
12
Year of publication
1995
Pages
7186 - 7191
Database
ISI
SICI code
0021-8979(1995)78:12<7186:IOCTTP>2.0.ZU;2-6
Abstract
T1Ba(2)CaCu(2)O(7) (T1-1212) superconducting films 5000-6000 Angstrom thick have been grown on LaAlO3 (100) substrates using oxide precursor s in a closed two-zone thallination furnace. T1-1212 films can be grow n with transition temperatures similar to 100 K, and critical current densities measured by magnetization of J(cm)(5 K)>10(7) A/cm(2) and J( cm)(77 K)>10(5) A/cm(2). Processing conditions, substrate temperatures and T1-oxide source temperatures are found which result in smooth, ne arly phase-pure T1-1212 films. Variations in the respective temperatur e ramps of the T1-oxide zone and the substrate zone can greatly influe nce resulting film properties such as microstructure, morphology, supe rconducting transition temperature, and critical current density.