EFFECTS OF BUFFER LAYERS IN EPITAXIAL-GROWTH OF SRTIO3 THIN-FILM ON SI(100)

SrTiO3 thin film has been formed on Si(100) substrates with various si ngle buffer layers such as SrO, CeO2, CaF2, CoSi2 and a multibuffer la yer, YSZ/Y2O3/YBa2Cu3O7 by ArF excimer laser ablation. The relation of lattice orientation of buffer layers with SrTiO, layer has been eluci dated. The orientation of SrTiO3 film is influenced not only by lattic e matching but by crystal structure and chemical bonding of the buffer layers. As well, the multibuffer layer more effectively forms prefere ntial c-axis oriented SrTiO3 film on Si(100), while CoSi2 buffer is mo re effective for improving the dielectric constant of SrTiO3 than othe r buffer layers. (C) 1995 American Institute of Physics.