A study of the threshold of stimulated emission for optically pumped P
bSe and PbTe is presented, The influence of external parameters such a
s magnetic field and misfit strain on the threshold as well as the dif
ferential quantum efficiency of stimulated emission are analyzed. It i
s shown that effective energy gap shifts caused by the external parame
ters only weakly influence the threshold, whereas the main effect aris
es from the redistribution of the carriers in the multivalley band str
ucture when the degeneracy of the carriers in the valleys at the L poi
nts of the Brillouin zone is lifted. A consistent qualitative theoreti
cal explanation for the effects is given. (C) 1995 American Institute
of Physics.