A FIELD-ASSISTED EMISSION MODEL OF INTERFACE STATES IN HETEROSTRUCTURE DEVICES

We present a physical model to study the interface states in p-n heter ostructures at different ambient temperatures. Field-assisted emission of such states is considered as the source for the linear increase in charge concentration at the p-n interface with the applied reverse vo ltage. The high frequency capacitance-voltage technique is used to stu dy the charging and discharging of interface states in an MBE-made sam ple at different temperatures and different biases. The experimental r esults show good agreement with the prediction of our model. (C) 1995 American Institute of Physics.