SIDEGATING EFFECT ON SCHOTTKY CONTACT IN ION-IMPLANTED GAAS

Authors
WU J WANG ZG FAN TW LIN LY ZHANG M
Citation
J. Wu et al., SIDEGATING EFFECT ON SCHOTTKY CONTACT IN ION-IMPLANTED GAAS, Journal of applied physics, 78(12), 1995, pp. 7422-7423
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
12
Year of publication
1995
Pages
7422 - 7423
Database
ISI
SICI code
0021-8979(1995)78:12<7422:SEOSCI>2.0.ZU;2-0
Abstract
The sidegating effect on the Schottky barrier in ion-implanted GaAs wa s investigated with capacitance-voltage profiling at various negative substrate voltages. It was demonstrated that the negative substrate vo ltage modulates the Schottky depletion region width as well as the spa ce charge region at the substrate-active channel interface. (C) 1995 A merican Institute of Physics.