NONCONTACT SHEET RESISTANCE MEASUREMENT TECHNIQUE FOR WAFER INSPECTION

Authors
KEMPA K ROMMEL JM LITOVSKY R BECLA P LOJEK B BRYSON F BLAKE J
Citation
K. Kempa et al., NONCONTACT SHEET RESISTANCE MEASUREMENT TECHNIQUE FOR WAFER INSPECTION, Review of scientific instruments, 66(12), 1995, pp. 5577-5581
Citations number
11
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
Journal title
Review of scientific instruments → ACNP
ISSN journal
00346748
Volume
66
Issue
12
Year of publication
1995
Pages
5577 - 5581
Database
ISI
SICI code
0034-6748(1995)66:12<5577:NSRMTF>2.0.ZU;2-5
Abstract
A new technique, MICROTHERM, has been developed for noncontact sheet r esistance measurements of semiconductor wafers. It is based on the app lication of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distributio n across the wafer. This method is nondestructive, noncontact, and all ows for measurements of very small areas (several square microns) of t he wafer. (C) 1995 American Institute of Physics.