THE EFFECT OF THE MBE GROWTH-RATE ON THE SURFACE PHASE-DIAGRAM FOR GAAS(001)

The molecular beam epitaxy phase diagrams for the GaAs(001) surface ha ve been determined using the reflection high-energy electron diffracti on technique. The surface reconstructions were investigated during the growth processes carried out with a Riber 32P machine. In the experim ents the substrate temperature, the Ga flux, and the As-4 flux were me asured directly (the absolute values of the Ga and As-4 fluxes are giv en in the phase diagrams), The investigations of surface reconstructio ns were carried out for three different values of the Ga flux. During the growth processes the reconstructions (4X2), (3X1), (4X6), (3X6), ( 2X4), and (2X2) were observed. The boundaries between different recons tructions have been determined precisely for each value of the growth rate. The dependence of the positions of the boundaries on the Ga flux has been discussed. The obtained results have been compared with thos e known in the literature.