BAND-STRUCTURE OF MBE-GROWN ZB-MNTE CDTE-OPTICAL AND PHOTOEMISSION-STUDIES/

Citation
Bj. Kowalski et al., BAND-STRUCTURE OF MBE-GROWN ZB-MNTE CDTE-OPTICAL AND PHOTOEMISSION-STUDIES/, Thin solid films, 267(1-2), 1995, pp. 69-73
Citations number
31
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
267
Issue
1-2
Year of publication
1995
Pages
69 - 73
Database
ISI
SICI code
0040-6090(1995)267:1-2<69:BOMZCA>2.0.ZU;2-A
Abstract
This paper presents the results of optical and photoemission experimen ts performed on zinc blende-MnTe (ZB-MnTe) layers grown on CdTe (100) surface. The spectral dependence of the reflectivity coefficient was m easured at room temperature for the photon energy range 1.5 less than or equal to hv less than or equal to eV. The results were compared wit h the known optical parameters of bulk Cd1-xMnxTe as well as with the adsorption coefficient spectra of ZB-MnTe. Resonant photoemission spec troscopy was used to reveal the Mn3d-derived contribution to the valen ce band density of states distribution. In particular, the localized e -type states manifest themselves clearly as a pronounced maximum centr ed at about 3.5 eV below the valence band edge. The results correspond well to those obtained for Cd1-xMnxTe.