PROPERTIES OF EPITAXIALLY GROWN CDTE LAYERS DOPED WITH INDIUM

We report on the growth and characterization of n-type indium-doped Cd Te films grown by molecular beam epitaxy on GaAs substrates. By varyin g the In flux we are able to control the carrier concentration in the range from 8 x 10(14) to 1.5 X 10(18) cm(-3). The samples have been in vestigated by photoluminescence, transport, and deep level transient s pectroscopy (DLTS) measurements. By DLTS we established that the conce ntration of the dominant electron trap, located at 0.45 eV below the e dge of the conduction band, is proportional to the net donor concentra tion. This result indicates that the trap may be related to the presen ce of indium dopants.