GROWTH OF 1.3 MU-M INASP INGAASP LASER STRUCTURES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

The optimization of growth conditions for high quality 1.3 mu m InAsP/ InGaAsP laser structures by gas source molecular beam epitaxy is repor ted. Measurements of photoluminescence intensity and threshold current s of highly strained InAsP/InGaAsP multiple quantum well (MQW) lasers indicate an optimum growth temperature substantially lower than that f or conventional 1.3 mu m InGaAsP quaternary lasers. Broad-area laser s tructures grown under the optimum conditions exhibited threshold curre nt densities as low as 400 A/cm(2). Buried heterostructures with uncoa ted facets exhibited threshold currents as low as 5.0 mA and internal losses of 8.0 cm(-1). (C) 1995 American Institute of Physics.