MID-WAVE INFRARED DIODE-LASERS BASED ON GAINSB INAS AND INAS/ALSB SUPERLATTICES/

We report the characterization of a set of broad-area semiconductor di ode lasers with mid-wave infrared (3-5 mu m) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple qu antum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (b roken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure an n- and p-type InAs/AlSb (24 Angstrom/24 An gstrom) superlattices grown lattice-matched to a GaSb substrate. By ta iloring constituent layer thicknesses in the Ga0.75In0.25Sb/InAs super lattice wells, laser emission wavelengths ranging from 3.28 mu m (maxi mum operating temperature=170 K) to 3.90 mu m (maximum operating tempe rature=84 K) are obtained. (C) 1995 American Institute of Physics.