HIGH-QUALITY CEO2 FILM GROWN ON SI(111) SUBSTRATE BY USING LOW-ENERGYDUAL-ION BEAM DEPOSITION TECHNOLOGY

By using the mass-analyzed low energy dual ion beam deposition techniq ue, a high quality epitaxial, insulating cerium dioxide thin film with a thickness of about 2000 Angstrom, has been grown on a silicon (111) substrate. The component species, cerium and oxygen, are homogeneous in depth, and have the correct stoichiometry for CeO2. X-ray double-cr ystal diffraction shows that the full width at half maximum of the (22 2) and (111) peaks of the film are less than 23 and 32 s, respectively , confirming that the film is a perfect single crystal. (C) 1995 Ameri can Institute of Physics.