EFFECT OF PHOSPHORUS COMPOSITION ON THE STRUCTURAL QUALITY OF GAINP GAASP SHORT-PERIOD SUPERLATTICES/

Short-period Ga0.51In0.49P/GaAsyP1-y strained superlattices were grown , by organometallic vapor phase epitaxy, with periods around 70 Angstr om and phosphorus compositions from 0.04 to 0.31. Ground state emissio n as high as 1.73 eV was observed. Model solid theory predictions fit this data well, particularly at lower P compositions. Type II structur es were obtained for phosphorus compositions above 0.04. The introduct ion of phosphorus in the low bandgap regions of these superlattices wa s found to significantly improve their structural and optical quality. These superlattices provide, in many applications, a viable alternati ve to the quaternary alloy GaInAsP which is required for obtaining the se bandgaps in Al-free systems lattice-matched to GaAs. To our knowled ge this is the first report on the growth and modeling of short-period superlattices using this material system. (C) 1995 American Institute of Physics.