DAMAGE-INDUCED LUMINESCENCE IN INP

Citation
T. Sekiguchi et Hs. Leipner, DAMAGE-INDUCED LUMINESCENCE IN INP, Applied physics letters, 67(25), 1995, pp. 3777-3779
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
25
Year of publication
1995
Pages
3777 - 3779
Database
ISI
SICI code
0003-6951(1995)67:25<3777:DLII>2.0.ZU;2-L
Abstract
Optical properties of scratched InP specimens were studied by means of cathodoluminescence (CL). A new luminescence band around 942 nm (S1) was detected in the vicinity of scratches. The S1 band is composed of two peaks at 938 and 946 nm. Monochromatic CL images showed that the S 1 luminescence is constrained to regions of high residual strain and n ot related to dislocations or cracks. The S1 intensity increased in sa mples with a higher Fe content. S1 vanished after 450 K annealing. (C) 1995 American Institute of Physics.