GROWTH OSCILLATIONS WITH MONOLAYER PERIODICITY MONITORED BY ELLIPSOMETRY DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS(001)

Authors
ZETTLER JT WETHKAMP T ZORN M PRISTOVSEK M MEYNE C PLOSKA K RICHTER W
Citation
Jt. Zettler et al., GROWTH OSCILLATIONS WITH MONOLAYER PERIODICITY MONITORED BY ELLIPSOMETRY DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS(001), Applied physics letters, 67(25), 1995, pp. 3783-3785
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
25
Year of publication
1995
Pages
3783 - 3785
Database
ISI
SICI code
0003-6951(1995)67:25<3783:GOWMPM>2.0.ZU;2-4
Abstract
In this letter we report on the observation of growth oscillations wit h monolayer periodicity by ellipsometry. An oscillation amplitude of d elta(epsilon(1))=0.05 was measured using an optimized spectroscopic in situ ellipsometer whose wavelength was tuned to the 2.65 eV resonance energy of the arsenic dimers covering the GaAs (001) growth surface. The monolayer periodicity was verified by parallel monitoring of the g rowth with reflectance anisotropy spectroscopy (RAS). (C) 1995 America n Institute of Physics.