ELECTRIC AND PHOTOELECTRIC PROPERTIES OF ANISOTYPE GAP-SI HETEROSTRUCTURES PREPARED BY THE GAS-PHASE EPITAXY TECHNIQUE OF GALLIUM-PHOSPHIDE

Authors
EVSTROPOV VV ZHILYAEV YV NAZAROV N SERGEEV DV FEDOROV LM
Citation
Vv. Evstropov et al., ELECTRIC AND PHOTOELECTRIC PROPERTIES OF ANISOTYPE GAP-SI HETEROSTRUCTURES PREPARED BY THE GAS-PHASE EPITAXY TECHNIQUE OF GALLIUM-PHOSPHIDE, Zurnal tehniceskoj fiziki, 63(12), 1993, pp. 41-49
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Zurnal tehniceskoj fiziki → ACNP
ISSN journal
00444642
Volume
63
Issue
12
Year of publication
1993
Pages
41 - 49
Database
ISI
SICI code
0044-4642(1993)63:12<41:EAPPOA>2.0.ZU;2-Q