RANGE PROFILES IN SELF-ION-IMPLANTED CRYSTALLINE SI

Range profiles of 50- and 100-keV Si-30(+) ions implanted into Si(100) at room temperature with doses from 2 x 10(16) to 1 x 10(18) ions cm( -2), and of 2 x 10(16) 50-keV Si-30(+) ions cm(-2) in Si(100) preimpla nted with 50-keV Si-28(+) ions with doses from 5 x 10(13) to 1 x 10(18 ) ions cm(-2), have been studied with nuclear reaction techniques. The structural transformation of the samples was studied by Rutherford ba ckscattering and channeling. The dependence of the range profile on th e damage structure of the sample has been examined by comparing measur ed range profiles with those obtained in molecular-dynamics simulation s. The dependence of the range profile on the polycrystalline sample s tructure is shown.