L. Skuja et al., SITE-SELECTIVE LASER-SPECTROSCOPY STUDIES OF THE INTRINSIC 1.9-EV LUMINESCENCE CENTER IN GLASSY SIO2, Physical review. B, Condensed matter, 52(21), 1995, pp. 15208-15216
The intrinsic 1.9-eV photoluminescence band (the R band) in neutron-ir
radiated synthetic silica glass has been studied using site-selective
photoluminescence excitation in the 2.0 eV absorption band and transie
nt spectral hole-burning techniques. The measurements of the low-energ
y wing of the zero-phonon line intensity distribution function confirm
the predicted nearly Gaussian shape with a peak at 1.93 eV and a half
-width of 86 meV. The homogeneous shape of the emission contour (''sin
gle-site spectrum'') has been evaluated by a selective saturation meth
od, revealing, a phonon sideband with a peak at 60 cm(-1) and a width
of approximately 500 cm(-1). The total Huang-Rhys factor is estimated
as 1.50 +/- 0.5 and the partial Huang-Rhys factor for the interaction
with the 890 cm(-1) local vibration is 0.08 +/- 0.04. The analysis of
spectral parameters indicates that the R band cannot be due to peroxid
e or ozonide molecular ions and upholds the attribution of the center
to the nonbridging oxygen hole center.