Ss. Kocha et al., ELECTROCHEMICAL INVESTIGATION OF THE GALLIUM NITRIDE-AQUEOUS ELECTROLYTE INTERFACE, Journal of the Electrochemical Society, 142(12), 1995, pp. 238-240
GaN (E(g) = similar to 3.4 eV) was photoelectrochemically characterize
d and the energetic position of its bandedges determined with respect
to SHE. Electrochemical impedance spectroscopy was employed to analyze
the interface, determine the space charge layer capacitance, and, sub
sequently obtain the flatband potential of GaN in different aqueous el
ectrolytes. The flatband potential of GaN varied at an approximately N
ernstian rate in aqueous buffer electrolytes of different pHs indicati
ng acid-base equilibria at the interface.