GROWTH OF SIC FILMS ON SI(100) BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION USING SIH4 CH4/H-2/

Authors
LIU CC LEE CP CHENG KL CHENG HC YEW TR
Citation
Cc. Liu et al., GROWTH OF SIC FILMS ON SI(100) BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION USING SIH4 CH4/H-2/, Journal of the Electrochemical Society, 142(12), 1995, pp. 4279-4284
Citations number
17
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
142
Issue
12
Year of publication
1995
Pages
4279 - 4284
Database
ISI
SICI code
0013-4651(1995)142:12<4279:GOSFOS>2.0.ZU;2-K
Abstract
SiC films were deposited on Si(100) substrates by electron cyclotron r esonance chemical vapor deposition at 500 degrees C using SiH4/CH4/H-2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x-ray photoelectron spectroscopy and cross-secti onal transmission electron microscopy, respectively. The film composit ion and microstructure are correlated to process variables. The deposi tion mechanism which controls the film characteristics is presented.