X-RAY PHOTOELECTRON-SPECTROSCOPY (XPS) ANALYSIS OF OXIDE FORMATION ONSILICON WITH HIGH-PURITY OZONE

Authors
KUROKAWA A ICHIMURA S
Citation
A. Kurokawa et S. Ichimura, X-RAY PHOTOELECTRON-SPECTROSCOPY (XPS) ANALYSIS OF OXIDE FORMATION ONSILICON WITH HIGH-PURITY OZONE, JPN J A P 2, 34(12A), 1995, pp. 1606-1608
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
12A
Year of publication
1995
Pages
1606 - 1608
Database
ISI
SICI code
Abstract
Initial oxide formation on a Si(111) surface with high-purity ozone (m ore than 80% ozone concentration at the sample position) is investigat ed by X-ray photoelectron spectroscopy (XPS). The suboxide formed by o xidation is characterized from Si-2p spectra. From the comparison of t he suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.