FABRICATION OF 45-DEGREES MIRRORS TOGETHER WITH WELL-DEFINED V-GROOVES USING WET ANISOTROPIC ETCHING OF SILICON

Citation
C. Strandman et al., FABRICATION OF 45-DEGREES MIRRORS TOGETHER WITH WELL-DEFINED V-GROOVES USING WET ANISOTROPIC ETCHING OF SILICON, Journal of microelectromechanical systems, 4(4), 1995, pp. 213-219
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
10577157
Volume
4
Issue
4
Year of publication
1995
Pages
213 - 219
Database
ISI
SICI code
1057-7157(1995)4:4<213:FO4MTW>2.0.ZU;2-Y
Abstract
The most commonly used microstructure for passive fiber alignment is t he ordinary upsilon-groove, defined by (111) planes on a (100) silicon wafer, The plane at the end of the groove, having a 54.7 degrees angl e to the surface, can be used as a reflecting mirror, For single-mode fiber applications, a 45 degrees mirror is advantageous together with high accuracy in the position of the fiber, i,e, a smooth mirror and g ood control of the groove geometry is needed. Two techniques are prese nted to form 45 degrees mirrors along with well-defined grooves in sil icon, using the wet anisotropic etchants EDP and KOH, These techniques are used: 1) to reveal (110) planes on (100) silicon and 2) to make ( 111) mirrors on wafers that are cut 9.7 degrees off the [100] axis, On (100) silicon, EDP without pyrazine gave the best result. The best mi rror and groove reproducibility was found on off-axis cut silicon, usi ng 36 wt.% KOH, with isopropyl alcohol added [145].