ANALYTICAL CHARGE CONTROL MODEL FOR GAAS ALGAAS-BASED MULTIPLE-QUANTUM-WELL POWER HEMTS/

We have developed an analytical charge control model for GaAs/AlGaAs m ultiple-quantum-well (MQW-) based high-electron-mobility transistors. The validity of the developed model was tested with numerical calculat ions based on self-consistent solutions of Poisson and Schrodinger equ ations. Excellent agreement was achieved with both numerical calculati ons and experimental data. Furthermore, simple expressions are develop ed for the location of sheet charge density from the top and bottom in terfaces inside the GaAs quantum well The developed model provides a g ood tool for the design and optimization of microwave circuit design. (C) 1996 John Wiley & Sons, Inc.