LARGE ENHANCEMENT OF PHOTOLUMINESCENCE FROM POROUS SILICON FILMS BY POST-ANODIZATION TREATMENT IN BOILING HYDROGEN-PEROXIDE

The photoluminescence from porous silicon films on p-type silicon subs trates of resistivity 12 ohm-cm prepared by anodic etching in dilute H F was greatly enhanced by post-anodization treatment in boiling H2O2. A Small red shift followed by a slight blue shift has been observed. T he formation of ultra-small silicon clusters and the oxygenation of th e Si-SiO2 interface are believed to be responsible for the above pheno mena.