Ka. Jenkins et al., HISTORY DEPENDENCE OF OUTPUT CHARACTERISTICS OF SILICON-ON-INSULATOR (SOI) MOSFETS, IEEE electron device letters, 17(1), 1996, pp. 7-9
It is demonstrated that the drain current overshoot in partially deple
ted SOI MOSFET's has a significant history dependence or memory effect
, even in the absence of impact ionization under low drain biases. The
measured output characteristics of partially depleted SOI MOSFET's ar
e shown to be dynamically dependent on their switching history, freque
ncy, and bias conditions, due to the finite time constants of carrier
generation (thermal or impact ionization) and recombination in the flo
ating body.