AN ANALYTICAL MODEL FOR MINIMUM DRIFT REGION LENGTH OF SOI RESURF DIODES

Authors
CHUNG SK HAN SY SHIN JC CHOI YI KIM SB
Citation
Sk. Chung et al., AN ANALYTICAL MODEL FOR MINIMUM DRIFT REGION LENGTH OF SOI RESURF DIODES, IEEE electron device letters, 17(1), 1996, pp. 22-24
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
1
Year of publication
1996
Pages
22 - 24
Database
ISI
SICI code
0741-3106(1996)17:1<22:AAMFMD>2.0.ZU;2-W
Abstract
An analytical model for calculating the minimum drift region length of SOI RESURF diodes is presented with an expression for the maximum bre akdown voltage of the device. The minimum drift region length is deter mined from the condition that the maximum breakdown voltage due to the one-dimensional field along the vertical path equals that of the late ral electric field along the surface. Analytical results agree well wi th the simulations using PISCES II, and qualitatively with the experim ental results.