HETEROEPITAXIAL GROWTH OF NICKEL ON DIAMOND

Nickel films have been grown on synthetic type Ib diamonds. The films prepared under ultra high vacuum conditions by electron-beam evaporati on were characterized by X-ray diffraction, reflection high-energy ele ctron diffraction, low-energy electron diffraction, scanning electron microscopy, Nomarski microscope and Talystep profilometer. Epitaxial g rowth was found even at a 25 degrees C substrate temperature, in contr ast to the literature (R.J. Caveney et al., Diamond Research, Industri al Diamond Information Bureau, London, 1971, p. 20) where an epitaxy t emperature of 205 degrees C is reported. Below 300 degrees C the films grow in a two-dimensional mode.