L. Huang et al., CHEMICAL-DEPOSITION OF BI2S3 THIN-FILMS ON GLASS SUBSTRATES PRETREATED WITH ORGANOSILANES, Thin solid films, 268(1-2), 1995, pp. 49-56
The chemical deposition of Bi2S3 thin films on glass substrates modifi
ed by treatment with solutions of 3-mercaptopropyltrimethoxysilane and
3-aminopropyltrimethoxysilane is described. Such treatment helps prev
ent the peeling of thin films, a problem which is otherwise encountere
d in the chemical deposition process. Uniform thin films having thickn
esses up to 0.32 mu m were obtained on the modified surfaces. X-ray ph
otoelectron spectroscopy was employed to demonstrate that silanization
takes place at the surfaces of the glass substrates. The relative ato
mic concentrations of nitrogen or sulfur on these surfaces increase wi
th the time of immersion in the silanizing solutions. X-ray diffractio
n patterns of air-annealed Bi2S3 thin films were obtained. Optical tra
nsmittance and photoconductivity were measured and compared with those
of the thin films deposited on untreated glass substrates. It was fou
nd that the thin films deposited on the silanized substrates were stab
le at 200 degrees C and maintain their original physical characteristi
cs.