CHEMICAL-DEPOSITION OF BI2S3 THIN-FILMS ON GLASS SUBSTRATES PRETREATED WITH ORGANOSILANES

The chemical deposition of Bi2S3 thin films on glass substrates modifi ed by treatment with solutions of 3-mercaptopropyltrimethoxysilane and 3-aminopropyltrimethoxysilane is described. Such treatment helps prev ent the peeling of thin films, a problem which is otherwise encountere d in the chemical deposition process. Uniform thin films having thickn esses up to 0.32 mu m were obtained on the modified surfaces. X-ray ph otoelectron spectroscopy was employed to demonstrate that silanization takes place at the surfaces of the glass substrates. The relative ato mic concentrations of nitrogen or sulfur on these surfaces increase wi th the time of immersion in the silanizing solutions. X-ray diffractio n patterns of air-annealed Bi2S3 thin films were obtained. Optical tra nsmittance and photoconductivity were measured and compared with those of the thin films deposited on untreated glass substrates. It was fou nd that the thin films deposited on the silanized substrates were stab le at 200 degrees C and maintain their original physical characteristi cs.