2-DIMENSIONAL GROWTH OF SI GRAINS INSIDE AU THIN-FILMS

The growth of Si grains inside Au thin films is studied in the Au/a-Si :H bilayer system. The crystallization process is promoted at low temp eratures and the samples are characterized by scanning electron micros copy (SEM) and in-situ electrical measurements. SEM micrographs obtain ed on samples submitted to isothermal treatment show the appearance of Si grains on the Au thin film surface. The number of nuclei did not c hange during the reaction and the crystallized area shows a quadratic dependence on the treatment time, a typical behavior of an interface-l imited crystallization process. The electrical measurements allowed mo nitoring the crystallization process and the determination of the grow th parameter n varying between 1.9 and 2.6. Comparison between the two techniques permits us to conclude that the Si grains grow two-dimensi onally inside the Au thin film.