USE OF SINGLE-SOURCE, MIXED-METAL PRECURSORS FOR CHEMICAL-VAPOR-DEPOSITION OF CU-SN ALLOYS

A series of vinyltrialkyltin copper(I) 1,1,1,5,5,5-hexafluoro-2,4-pent anedionato (hfac) complexes were synthesized and used for the depositi on of copper-tin films at temperatures between 180 and 240 degrees C. At 180 degrees C, a carbon-free copper film, containing 0.6 at. % Sn, is deposited and demonstrates the utility of mixed-metal, single-sourc e precursors for forming copper alloys. A very strong substrate temper ature dependence toward film composition and purity was observed. Our preliminary results using single-source, mixed-metal precursors for co pper alloy formation are reported.