VERY-LOW RESISTIVITY CDS FILMS BY ANNEALING IN PD-PURIFIED H-2

Citation
E. Vasco et al., VERY-LOW RESISTIVITY CDS FILMS BY ANNEALING IN PD-PURIFIED H-2, Materials letters, 25(5-6), 1995, pp. 205-207
Citations number
5
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
25
Issue
5-6
Year of publication
1995
Pages
205 - 207
Database
ISI
SICI code
0167-577X(1995)25:5-6<205:VRCFBA>2.0.ZU;2-4
Abstract
Results of annealing of CdS films in Pd-purified H-2 at different temp eratures are reported. A very low resistivity of 0.092 Omega cm was ob tained at an optimal annealing temperature of 300 degrees C. The depen dence of the band gap on annealing temperature as measured from transm ission spectra is also discussed.