INDIRECT TUNNELING IN METAL-INSULATOR-METAL JUNCTIONS

I-V characteristics of realistic MIM junctions were calculated assumin g a two step indirect tunneling as the major mechanism. Electron-phono n broadening of the energy level of the intermediate defect states is taken into account. The theory is compared with our experimental inves tigations of Pd-MgO-Pd junctions and good quantitative agreement is ac hieved. The intermediate states are provided by the F-centers of the M gO vacancies. A consistency between the experimental data and the theo ry is obtained for the values of the physical parameters known from in dependent studies on MgO.