AN OPTICAL METHOD FOR DETERMINING THE IONIZATION-ENERGY OF THE CENTERS CONTROLLING CHARGE-TRANSFER IN GAAS-BASED PIN-STRUCTURES

A new method is reported to determine the ionization energy of the dee p centers controlling charge transfer in GaAs-based pin-structures imp ortant for applications. The idea of the method lies in measuring the dependence of kinetics of the i-layer field on temperature upon applic ation of step voltage of inverse polarity to the structure and in subs equent processing of the experimental data on the basis of the knowled ge gained during studies of dynamics of the space charge and the elect ric field in a pin-structure [1]. The ionization energy of a deep acce ptor level has been determined, as E(A) - E(V) = 0.38 +/- 0.05 eV.