EFFECT OF PRESSURE ON TURNOVER BEHAVIOR IN I-V CHARACTERISTIC CURVES IN GETESE CHALCOGENIDE GLASS

Thick layers of GeTeSe chalcogenide glass have been prepared and subje cted to conduction measurements under the effect of both temperature a nd pressure. The results of the I-V characteristics exhibit transition from high-resistance state to differential negative resistance state through a turnover point. The application of uniaxial pressure shows t he similar effect of temperature on that behaviour. Both current and v oltage at the turnover point depend on pressure and ambient temperatur e. The rise of temperature in the conduction path due to joule heating and application of uniaxial pressure as well as the reduction in the energy gap width (beta = 2.87.10(-12) eV/N m(-2)) are estimated and di scussed at the turnover point. This behaviour is explained according t o the orientation of dipoles randomly dispersed in viscous amorphous m atrix.