Mk. Elmansy et al., EFFECT OF PRESSURE ON TURNOVER BEHAVIOR IN I-V CHARACTERISTIC CURVES IN GETESE CHALCOGENIDE GLASS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(10), 1995, pp. 1121-1130
Thick layers of GeTeSe chalcogenide glass have been prepared and subje
cted to conduction measurements under the effect of both temperature a
nd pressure. The results of the I-V characteristics exhibit transition
from high-resistance state to differential negative resistance state
through a turnover point. The application of uniaxial pressure shows t
he similar effect of temperature on that behaviour. Both current and v
oltage at the turnover point depend on pressure and ambient temperatur
e. The rise of temperature in the conduction path due to joule heating
and application of uniaxial pressure as well as the reduction in the
energy gap width (beta = 2.87.10(-12) eV/N m(-2)) are estimated and di
scussed at the turnover point. This behaviour is explained according t
o the orientation of dipoles randomly dispersed in viscous amorphous m
atrix.