MODULATED PHOTOREFLECTANCE CHARACTERIZATION OF ION-IMPLANTED SEMICONDUCTOR WAFERS

Modulated PhotoReflectance (MPR) measurements on semiconductor wafers implanted with boron or silicon ions in the dose range 5 x 10(10)-5 x 10(15) ions/cm2 are presented. Correspondingly, a one-dimensional theo retical multilayer model is established. In the theory, as the implant dose is lower than a critical value, the variation of the MPR signal is contributed mainly by the implanted defects and damages. However, w hen the dose is above the critical dose, the change of the MPR signal is chiefly due to the formation and growth of an amorphous layer. The theoretical results are in good agreement with those of experiments.