STUDY ON THE CRYSTALLIZATION AND MECHANICAL-BEHAVIOR OF CDIN2S4 SINGLE-CRYSTALS

Citation
Mj. Tafreshi et al., STUDY ON THE CRYSTALLIZATION AND MECHANICAL-BEHAVIOR OF CDIN2S4 SINGLE-CRYSTALS, Indian Journal of Pure & Applied Physics, 34(1), 1996, pp. 18-21
Citations number
8
Categorie Soggetti
Physics
ISSN journal
00195596
Volume
34
Issue
1
Year of publication
1996
Pages
18 - 21
Database
ISI
SICI code
0019-5596(1996)34:1<18:SOTCAM>2.0.ZU;2-M
Abstract
Single crystals of CdIn2S4 have been grown by the chemical vapour tran sport technique (CVT) by adopting both the stationary temperature prof ile (STP) and the time-varying temperature profile (TVTP) methods. The TVTP method enabled us to have better control on primary nucleation i n such a way that a limited number of seed crystals were allowed to gr ow. Hence the grown crystals were of bigger sizes than those grown by the STP method. X-ray photoelectron spectroscopy (XPS) and atomic abso rption spectroscopy (AAS) studies confirmed the presence of cadmium, i ndium and sulphur in the grown crystals. Optical tranmission measureme nt has been done to find out the energy gap of the grown crystals. Roo m temperature laser Raman spectrum recorded by using the (100) face of the grown crystals showed the different vibrational modes characteris tic of the grown crystals. The mechanical properties of the grown crys tals have been studied by using the microindentation analysis.