Mj. Tafreshi et al., STUDY ON THE CRYSTALLIZATION AND MECHANICAL-BEHAVIOR OF CDIN2S4 SINGLE-CRYSTALS, Indian Journal of Pure & Applied Physics, 34(1), 1996, pp. 18-21
Single crystals of CdIn2S4 have been grown by the chemical vapour tran
sport technique (CVT) by adopting both the stationary temperature prof
ile (STP) and the time-varying temperature profile (TVTP) methods. The
TVTP method enabled us to have better control on primary nucleation i
n such a way that a limited number of seed crystals were allowed to gr
ow. Hence the grown crystals were of bigger sizes than those grown by
the STP method. X-ray photoelectron spectroscopy (XPS) and atomic abso
rption spectroscopy (AAS) studies confirmed the presence of cadmium, i
ndium and sulphur in the grown crystals. Optical tranmission measureme
nt has been done to find out the energy gap of the grown crystals. Roo
m temperature laser Raman spectrum recorded by using the (100) face of
the grown crystals showed the different vibrational modes characteris
tic of the grown crystals. The mechanical properties of the grown crys
tals have been studied by using the microindentation analysis.