THERMOELECTRIC PROPERTIES AND I-V CHARACT ERISTICS OF IRON-SILICON OXIDIZED LAYER IRON DISILICIDE MATERIAL

Authors
TOKIAI T UESUGI T KOUMOTO K
Citation
T. Tokiai et al., THERMOELECTRIC PROPERTIES AND I-V CHARACT ERISTICS OF IRON-SILICON OXIDIZED LAYER IRON DISILICIDE MATERIAL, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 103(12), 1995, pp. 1270-1274
Citations number
21
Categorie Soggetti
Material Science, Ceramics
Journal title
Nippon Seramikkusu Kyokai gakujutsu ronbunshi → ACNP
ISSN journal
09145400
Volume
103
Issue
12
Year of publication
1995
Pages
1270 - 1274
Database
ISI
SICI code
0914-5400(1995)103:12<1270:TPAICE>2.0.ZU;2-P
Abstract
We have investigated thermoelectric properties and I-V characteristics of the sintered n-type iron disilicide, Fe0.95Co0.05Si2.00. Partial o xidation of the surface to form an oxidized-layer/semiconductor juncti on was found to increase both Seebeck coefficient and resistivity at r oom temperature to 700 degrees C. I-V characteristics of this junction obeyed an equation of the Poole-Frenkel type emission, indicating for mation of an electronic potential barrier by the oxidized layer, Fe-O/ SiO2. It is considered that increase in Seebeck coefficient and resist ivity are due to the potential barrier.