T. Tokiai et al., THERMOELECTRIC PROPERTIES AND I-V CHARACT ERISTICS OF IRON-SILICON OXIDIZED LAYER IRON DISILICIDE MATERIAL, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 103(12), 1995, pp. 1270-1274
We have investigated thermoelectric properties and I-V characteristics
of the sintered n-type iron disilicide, Fe0.95Co0.05Si2.00. Partial o
xidation of the surface to form an oxidized-layer/semiconductor juncti
on was found to increase both Seebeck coefficient and resistivity at r
oom temperature to 700 degrees C. I-V characteristics of this junction
obeyed an equation of the Poole-Frenkel type emission, indicating for
mation of an electronic potential barrier by the oxidized layer, Fe-O/
SiO2. It is considered that increase in Seebeck coefficient and resist
ivity are due to the potential barrier.