TEMPERATURE-INDUCED REBOUND IN AL-GATE NMOS TRANSISTORS

A rebound effect in irradiated Al-gate NMOS transistors for irradiatio n doses of 50, 100 and 2000 Gy has been explored. This effect during t emperature-bias annealing is caused both by the neutralisation of posi tive oxide charge by electron tunnelling from silicon, and by a nonsig nificant change in the number of interface traps created during irradi ation of gamma-rays. It is shown that rebound effect increases with th e increase of the total dose irradiation of NMOS transistors, This eff ect was also observed in irradiated Si-gate transistors for an irradia tion dose of 1000 Gy.