A LOW-POWER AND HIGH-SPEED IMPULSE-TRANSMISSION CMOS INTERFACE CIRCUIT

Citation
M. Nogawa et al., A LOW-POWER AND HIGH-SPEED IMPULSE-TRANSMISSION CMOS INTERFACE CIRCUIT, IEICE transactions on electronics, E78C(12), 1995, pp. 1733-1737
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09168524
Volume
E78C
Issue
12
Year of publication
1995
Pages
1733 - 1737
Database
ISI
SICI code
0916-8524(1995)E78C:12<1733:ALAHIC>2.0.ZU;2-V
Abstract
A new low-power and high-speed CMOS interface circuit is proposed in w hich signals are transmitted by means of impulse voltage. This mode of transmission is called impulse transmission. Although a termination r esistor is used for impedance matching, the current through the output transistors and the termination resistor flows only in transient stat es and no current flows in stable states. The output buffer and the te rmination resistor dissipate power only in transient states, so their power dissipation is reduced to 30% that of conventional low-voltage-s wing CMOS interface circuits at 160 MHz. The circuit was fabricated by 0.5 mu m CMOS technology and was evaluated at a supply voltage of 3.3 V. Experimental results confirm low power of 4.8 mW at 160 MHz and hi gh-speed 870 Mb/s error free point-to-point transmission.